Irfbe30 datasheet

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August undefined, 2024

WebIRF1310N 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty factor D = t / t 2. Peak T =P x Z + T 1 2 J DM thJC C P t t DM 1 2 t , Rectangular Pulse Duration (sec) WebType: n-channel Drain-to-Source Breakdown Voltage: 800 V Gate-to-Source Voltage, max: ±20 V; Drain-Source On-State Resistance, max: 3 mΩ Continuous Drain Current: 4.1 A Total Gate Charge: 78 nC Power Dissipation: 125 W Package: TO-220AB

IRFBE30, SiHFBE30 Datasheet by Vishay Siliconix

Web• 72 bits bus width - (Can typically be used as 64 bits data + 8 bits ECC, offering single-bit error correction, and dual-bit error detection) • 2.1 GT/s and 2.4GT/s (up to 150Gbps) transfer speeds • Dimensions 15mm x 20mm x 1.92mm • Temperature range [-40 ; +105]°C or [-55 ; +125]°C DOWNLOAD DATASHEET dutch catechism pdf

IRFBE30, SiHFBE30 Datasheet by Vishay Siliconix

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Irfbe30 datasheet

WebVS-HFA15TB60-M3 www.vishay.com Vishay Semiconductors Revision: 16-Dec-2024 4 Document Number: 96191 For technical questions within your region: [email protected], [email protected], [email protected] WebIRFBE30, SiHFBE30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to …

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WebIRFBE30 Manufacturer/Brand: Electro-Films (EFI) / Vishay Product Description: MOSFET N-CH 800V 4.1A TO-220AB Datasheets: 1.IRFBE30.pdf 2.IRFBE30.pdf RoHs Status: Contains lead / RoHS non-compliant Stock Condition: 4729 pcs stock Ship From: Hong Kong Shipment Way: DHL/Fedex/TNT/UPS/EMS REQUEST QUOTE WebDownload the IRFBE30 datasheet from Vishay Siliconix. Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) MOSFET N-CH 800V 4.1A TO-220AB

WebIRFBE30 Datasheet(PDF) - International Rectifier. Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A), IRFBE30 Datasheet, IRFBE30 circuit, IRFBE30 data sheet : IRF, … WebIRFBF30 www.vishay.com Vishay Siliconix S21-0883-Rev. C, 30-Aug-2024 5 Document Number: 91122 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

Web8 www.irf.com ˘ ˇˆ˙ ˆ˝˛ ˚ ˇ˛ˆ ˜ ˙ ! "ˇˆ % ˇˇ ˙ IN THE ASSEMBLY LINE "A" 12 ASSEMBLED ON WW 16, 1999 Web800V Single N-Channel HEXFET Power MOSFET in a TO-262 package. International Rectifier. 3. IRFBE30 PBF. 800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package. International Rectifier. 4. IRFBE30 S. 800V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

WebBuy IRFBE30 VISHAY SILICONIX , Learn more about IRFBE30 Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB, View the manufacturer, and stock, and datasheet pdf for the …

WebExact specifications should be obtained from the product data sheet. IRFBE30STRR; Digi-Key Part Number. IRFBE30STRR-ND - Tape & Reel (TR) Manufacturer. Vishay Siliconix. Manufacturer Product Number ... IRFBE30: HTML Datasheet: IRFBE30: Environmental & Export Classifications. Attribute Description; RoHS Status: RoHS non-compliant: Moisture ... cryptopulseartWebIRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 800 V Gate-Source Voltage … dutch cci numberhttp://www.datasheet.es/PDF/951201/IRFBE30-pdf.html cryptopubsWebDownload the IRFBE30 datasheet from Vishay Siliconix. Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) MOSFET N-CH 800V 4.1A TO-220AB IRFBE30 Vishay Siliconix … dutch cbWebIRFBE30: 800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package: International Rectifier: 2: IRFBE30 L: 800V Single N-Channel HEXFET Power MOSFET in a … dutch cavy clubWebIRFBE30 MOSFET Datasheet . Brand/Manufacturer: Generic: Country Of Origin: China: Packer / Importer Address: Constflick Technologies Limited, Building No 13 and 14, 3rd Floor, 2nd Main, Siddaiah Road, Bangalore, Karnataka - 560027 India. MRP: Rs. 120.36 (Inclusive of all Taxes) Write a review. cryptopulleyWebIRFBE30 Datasheet Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) - International Rectifier Power MOSFET, Vishay Siliconix IRFBE30L dutch castle hotels